| Name |
Year |
Degree |
Thesis |
Location |
| Ebrahim Andideh |
1990 |
Ph.D. |
Characterization of Reactive Ion Etching
of III-V Compound Semiconductor Materials |
Intel |
| Andrew Ketterson |
1991 |
Ph.D. |
A Modulation-Doped Field-Effect
Transistor-Based Optoelectronic Integrated Circuit Receiver for
Optical Interconnects |
Triquint |
| William Guggina |
1991 |
M.S. |
Selective Reactive Ion Etching of GaAs/AlxGa1-xAs
in SiCl4/SiF4 Plasmas |
Delco |
| Andrew Pawlowski |
1991 |
M.S. |
Simulation of Electron Beam Lithography |
Motorola |
| Minh Tong |
1992 |
Ph.D. |
An Enhancement/Depletion Process for III-V
Compound Semiconductor Heterostructure Field-Effect Transistors
and Optoelectronic Integrated Circuits |
IBM |
| Luana Kim
Lavalle |
1992 |
M.S. |
Microlithographic Fabrication of RF Coils
for NMR Microscopy |
Intel |
| Kari Nummila |
1993 |
Ph.D. |
Short-Channel Effects in III-V Compound
Semiconductor Field-Effect Transistors |
Nokia |
| Jong-Wook Seo |
1993 |
Ph.D. |
Metal-Semiconductor-Metal Photodetectors
for Optoelectronic Receiver Applications |
Hong-ik Univ.,
South Korea |
| Timothy Jon Dow |
1993 |
M.S. |
Characterization of the Chemically
Assisted Ion Beam Etching of III-V Semiconductors . |
Intel |
| Hong Chang |
1994 |
Ph.D |
Design, Fabrication, and Characterization
of Low-Dimensional Quantum Devices |
Intel |
| Sambhulal
Agarwala |
1994 |
Ph.D |
Reactive Ion Etching of InP-Based
Heterostructures and Field-Effect Transistors using HBr Plasma |
Intel |
| Daniel Ballegeer |
1992 1995 |
M.S. Ph.D. |
Design, Fabrication, and Characterization
of InP-Based Heterostructure Field-Effect Transistors for
High-Power Microwave Applications |
Intel |
| Carl Scafidi |
1995 |
M.S. |
Damage Induced to Semiconductor Devices
Via Reactive Ion Etching |
Intel |
| Roberto
Panepucci |
1996 |
Ph.D. |
Fabrication and Characterization of
Compound Semiconductor Nanostructures |
Florida International University |
| Patrick Fay |
1996 |
Ph.D. |
A High Speed Monolithic Integrated
Photoreceiver for Long Wavelength Communication Systems |
University
of Notre Dame |
| Aaditya Mahajan |
1996 |
M.S. |
A Study of Enhancement-Mode Modulation
Doped Field Effect Transistors on Lattice Matched Indium
Phosphide Based Semiconductor Compounds |
Nanovation/Triquint |
| Walter
Wohlmuth |
1997 |
Ph.D. |
High Speed and High Sensitivity
Metal-Semiconductor-Metal Photodetectors for Optoelectronic
Integrated Circuit Applications |
Triquint |
| Ronald
Grundbacher |
1993 1997 |
M.S. Ph.D. |
Modulation-Doped Field Effect Transistors
for High-Power Microwave Applications |
TRW |
| Mohamed Arafa |
1997 |
Ph.D. |
Silicon/Silicon-Germanium Modulation-Doped
Field-Effect Transistors for Complementary Circuit Applications |
Intel |
| Masud Hannan |
1997 |
Ph.D. |
Fabrication of Quantum Effect Devices and
Their Characterization in the Ballistic Transport Regime |
Maxim |
| Anthony Schmitz |
1997 |
M.S. |
Investigations of Metal Contacts to
Gallium Nitride |
Intel |
| Jean Fleurimont |
1997 |
M.S. |
A Chemically Assisted Ion Beam Etching
Process for High Quality Laser Mirrors in Gallium Arsenide |
Intel |
| Christopher
Youtsey |
1995 1998 |
M.S. Ph.D. |
Photoelectrochemical Wet Etching of
Gallium Nitride |
Nanovation/Triquint |
| Andrew Ping |
1994 1999 |
M.S. Ph.D. |
Process Development and Characterization
of A1GaN/GaN Heterostructure Field-Effect Transistors
|
Triquint |
| Aaditya Mahajan |
1999 |
Ph.D. |
The Monolithic Integration of Enhancement-
and Depletion-Mode High Electron Mobility Transistors for
Low-Power and High-Speed Circuit Applications in the
Lattice-Matched Indium Phosphide Material System |
Nanovation/Triquint |
| Gabriel Cueva |
1999 |
M.S. |
A Direct-Coupled FET Logic Divide-by-Four
Circuit in the Lattice-Matched Indium Phosphide Material System |
BAE |
| Cathy Lee |
2000 |
M.S. |
Fabrication of Recessed-Gate GaN MESFETs
Using Inductively-Coupled-Plasma Reactive Ion Etching |
Triquint |
| Anand Daga |
2000 |
M.S. |
A Study of the Effect of Damage of
Electron Mobility in an AlGaN/GaN Heterostructure |
AMD |
| Noah Kim |
2001 |
M.S. |
A Study of Schottky Contacts to Aluminum
Gallium Nitride |
Lucent
Technologies |
| Jae-Hyung Jang |
2002 |
Ph.D. |
Monolithic Integration of Long Wavelength
Photodetectors and High Electron Mobility Transistors on
Metamorphic Gallium Arsenide Substrates[Gold Prize, Samsung
HumanTech Thesis Award] |
Gwangju Institute
of Science and Technology, South Korea |
| Ling Zhou |
2002 |
Ph.D. |
Development and Characterization of Ohmic
and Schottky Contacts for GaN and AlGaN Devices |
Lumileds |
| William Lanford |
2002 |
M.S. |
Selective Dry Etching of Gallium Nitride
Over Aluminum Gallium Nitride For Gate Recess in Gallium
Nitride-Based MODFET Fabrication |
Intel |
| Randall Schwindt |
2004 |
Ph.D. |
GaN Based HEMTs for Microwave Power and
Noise: Physics and Applications |
Union University |
| Deepak Selvanathan |
2004 |
Ph.D. |
Ohmic Contacts to n-type GaN Based
Semiconductors |
Intel |
| Almaz Kuliev |
2001 2004 |
M.S. Ph.D. |
AlGaN/GaN HEMTs for High-Power
Applications: Transistor Device Issues and Process Development |
Schlumerger |
| Farid Khan |
1999 2004 |
M.S. Ph.D. |
High Density Plasma Etching of Wide
Bandgap Semiconductor Materials for Fabricating Novel Devices |
Islamic Development Bank |
| Michael Word |
2004 |
M.S. |
High Resolution Electron Beam
Lithography using Hydrogen Silsesquioxane Thin Films |
MBHB |
| Seiyon Kim |
2005 |
Ph.D. |
1.
Development of Thermally Stable Ir-based Gate Technology for
InA1Hs/InGaAs/InP E/D-HEMTs
|
Intel |
| Pavan Sannuti |
2005 |
M.S. |
Fabrication of
Ordered Arrays of Nanopores |
Intel |
| Weifeng Zhao |
2006 |
Ph.D. |
Monolithic
Integration of E/D- InGaAs/InAlAs/InP HEMTs |
PDF Solutions |
| Wiliam Lanford |
2006 |
Ph.D. |
Process
Development for Enhancement Mode AlGaN/GaN HEMTs |
Intel |
| Fitih M.
Mohammed |
2007 |
Ph.D. |
Foundations of
Ohmic contact formation on AlGaN/GaN heterostructures |
Intel |
| Donghyun Kim |
2008 |
Ph.D. |
Process
development and device characteristics of aluminum gallium
nitride / gallium nitride HEMTs for high frequency applications |
Korea Advanced
Nanofab Center |
| Liang Wang |
2008 |
Ph.D. |
Ohmic
metallizations to aluminum gallium nitride/gallium nitride high
electron mobility transistors: Electrical and microstructural
studies |
Texas Instruments |
| Guang Chen |
2008 |
Ph.D. |
Gallium nitride-based
HEMT devices modeling and performance characterization |
Analog Devices
Inc. |
| Anirban Basu |
2008 |
Ph.D. |
|
Post-doc at UIUC |
| Sookyung Choi |
2009 |
Ph.D. |
|
|
|
|
|
|
|
